SI8900EDB-T2-E1 Vidiny (USD) [54394pcs Stock]
- 1 pcs$0.71884
- 3,000 pcs$0.67285
- Ampahany:
- SI8900EDB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 20V 5.4A 10-MFP.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Rectifiers Bridge, Transistors - IGBTs - tokan-tena, Transistor - Tanjona manokana, Transistor - Unjunction Programmable, Transistors - JFET, Diode - Zener - Arrays and Transistors - FET, MOSFET - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI8900EDB-T2-E1 electronic components. SI8900EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8900EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8900EDB-T2-E1 Toetran'ny vokatra
Ampahany :
SI8900EDB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 20V 5.4A 10-MFP
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual) Common Drain
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
5.4A
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
10-UFBGA, CSPBGA
Package Fitaovana mpamatsy :
10-Micro Foot™ CSP (2x5)
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