Vishay Semiconductor Diodes Division - VS-GT100TP60N

KEY Part #: K6533284

VS-GT100TP60N Vidiny (USD) [427pcs Stock]

  • 1 pcs$108.51287
  • 24 pcs$89.00937

Ampahany:
VS-GT100TP60N
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
IGBT 600V 160A 417W INT-A-PAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - JFET, Transistors - Bipolar (BJT) - Single, mialoha alik and Transistor - FET, MOSFET - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division VS-GT100TP60N electronic components. VS-GT100TP60N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT100TP60N Toetran'ny vokatra

Ampahany : VS-GT100TP60N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 600V 160A 417W INT-A-PAK
Series : -
Ampahany : Active
IGBT Type : Trench
Configuration : Half Bridge
Volonta - Famoronan'ny mpanangom-bokatra : 600V
Ankehitriny - Collector (Ic) (Max) : 160A
Hery - Max : 417W
Vce (eo) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Ankehitriny - Collector Cutoff (Max) : 5mA
Fampitahana Input (Cies) @ Vce : 7.71nF @ 30V
fahan'ny : Standard
NTC Thermistor : No
Ny mari-pana : 175°C (TJ)
Type Type : Chassis Mount
Famonosana / tranga : INT-A-PAK (3 + 4)
Package Fitaovana mpamatsy : INT-A-PAK

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