TK31N60W,S1VF Vidiny (USD) [11067pcs Stock]
- 1 pcs$4.09851
- 30 pcs$3.35902
- 120 pcs$3.03128
- 510 pcs$2.53971
- Ampahany:
- TK31N60W,S1VF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N CH 600V 30.8A TO247.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Transistors - FETs, MOSFETs - Single, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - FET, MOSFET - RF, Transistor - FET, MOSFET - Arrays, Diodes - RF and Tratrao - SCR - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK31N60W,S1VF electronic components. TK31N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK31N60W,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31N60W,S1VF Toetran'ny vokatra
Ampahany :
TK31N60W,S1VF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 30.8A TO247
Series :
DTMOSIV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
30.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
3000pF @ 300V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
230W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-247
Famonosana / tranga :
TO-247-3
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