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Raha tsy voatanisa ny toerana misy anao dia safidio ny iray amin'ireto manaraka ireto:

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Microsemi Corporation - APTM100DSK35T3G

KEY Part #: K6522618

APTM100DSK35T3G Vidiny (USD) [1598pcs Stock]

  • 1 pcs$27.22101
  • 100 pcs$27.08558
Ampahany:
APTM100DSK35T3G
Manufacturer:
Microsemi Corporation
Famaritana antsipirihany:
MOSFET 2N-CH 1000V 22A SP3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Tratrao - TRIACs, Transistor - Unjunction Programmable, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - Modules, Transistors - JFET, Diodes - RF and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Microsemi Corporation APTM100DSK35T3G electronic components. APTM100DSK35T3G can be shipped within 24 hours after order. If you have any demands for APTM100DSK35T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100DSK35T3G Toetran'ny vokatra

Ampahany : APTM100DSK35T3G
Manufacturer : Microsemi Corporation
Description : MOSFET 2N-CH 1000V 22A SP3
Series : -
Ampahany : Active
Type FET : 2 N-Channel (Dual)
Fihetsika FET : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 5200pF @ 25V
Hery - Max : 390W
Ny mari-pana : -40°C ~ 150°C (TJ)
Type Type : Chassis Mount
Famonosana / tranga : SP3
Package Fitaovana mpamatsy : SP3

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