BSZ0910NDXTMA1 Vidiny (USD) [171885pcs Stock]
- 1 pcs$0.21519
- Ampahany:
- BSZ0910NDXTMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- DIFFERENTIATED MOSFETS.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Tratrao - TRIACs, Diodes - Rectifiers Bridge, Transistor - Tanjona manokana, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF, Ny kristianao - SCR and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSZ0910NDXTMA1 electronic components. BSZ0910NDXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0910NDXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0910NDXTMA1 Toetran'ny vokatra
Ampahany :
BSZ0910NDXTMA1
Manufacturer :
Infineon Technologies
Description :
DIFFERENTIATED MOSFETS
Series :
OptiMOS™
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
800pF @ 15V
Hery - Max :
1.9W (Ta), 31W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerVDFN
Package Fitaovana mpamatsy :
PG-WISON-8
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