SIHU6N65E-GE3 Vidiny (USD) [107279pcs Stock]
- 1 pcs$0.78603
- 10 pcs$0.70826
- 100 pcs$0.56916
- 500 pcs$0.44267
- 1,000 pcs$0.34695
- Ampahany:
- SIHU6N65E-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 650V 6A IPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Transistors - FET, MOSFET - RF, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Modules maotera mpamily, Ny kristianao - SCR, Diode - Mpitaovana - Arrays and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIHU6N65E-GE3 electronic components. SIHU6N65E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU6N65E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU6N65E-GE3 Toetran'ny vokatra
Ampahany :
SIHU6N65E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 650V 6A IPAK
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
820pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
78W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
IPAK (TO-251)
Famonosana / tranga :
TO-251-3 Long Leads, IPak, TO-251AB
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