Infineon Technologies - IPD95R2K0P7ATMA1

KEY Part #: K6420075

IPD95R2K0P7ATMA1 Vidiny (USD) [157743pcs Stock]

  • 1 pcs$0.23448

Ampahany:
IPD95R2K0P7ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 950V 4A TO252.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistorio - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - Modules, Transistors - IGBTs - tokan-tena, Ny kristianao - SCR and Tratrao - SCR - Modules ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD95R2K0P7ATMA1 Toetran'ny vokatra

Ampahany : IPD95R2K0P7ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 950V 4A TO252
Series : CoolMOS™ P7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 950V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 330pF @ 400V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 37W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO252-3
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63

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