Infineon Technologies - IPD26N06S2L35ATMA2

KEY Part #: K6420989

IPD26N06S2L35ATMA2 Vidiny (USD) [313051pcs Stock]

  • 1 pcs$0.11815
  • 2,500 pcs$0.11254

Ampahany:
IPD26N06S2L35ATMA2
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 55V 30A TO252-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD26N06S2L35ATMA2 Toetran'ny vokatra

Ampahany : IPD26N06S2L35ATMA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 30A TO252-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 30A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 35 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 621pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 68W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO252-3-11
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63