IXTP2R4N120P Vidiny (USD) [23090pcs Stock]
- 1 pcs$2.06287
- 50 pcs$2.05260
- Ampahany:
- IXTP2R4N120P
- Manufacturer:
- IXYS
- Famaritana antsipirihany:
- MOSFET N-CH 1200V 2.4A TO-220.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Tratrao - SCR - Modules, Diodes - RF, Diodes - Zener - Iray, Modules maotera mpamily and Diode - Mpitaovana - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in IXYS IXTP2R4N120P electronic components. IXTP2R4N120P can be shipped within 24 hours after order. If you have any demands for IXTP2R4N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP2R4N120P Toetran'ny vokatra
Ampahany :
IXTP2R4N120P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1200V 2.4A TO-220
Series :
Polar™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2.4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1207pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
125W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220AB
Famonosana / tranga :
TO-220-3
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