SI7980DP-T1-GE3 Vidiny (USD) [3687pcs Stock]
- 3,000 pcs$0.29953
- Ampahany:
- SI7980DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 20V 8A PPAK SO-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - tokan-tena, Diodes - Rectifiers Bridge, Modules maotera mpamily, Transistors - FETs, MOSFETs - Single and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7980DP-T1-GE3 electronic components. SI7980DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7980DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7980DP-T1-GE3 Toetran'ny vokatra
Ampahany :
SI7980DP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 20V 8A PPAK SO-8
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
2 N-Channel (Half Bridge)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1010pF @ 10V
Hery - Max :
19.8W, 21.9W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® SO-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® SO-8 Dual
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