Vishay Semiconductor Diodes Division - 1N6483HE3/96

KEY Part #: K6457749

1N6483HE3/96 Vidiny (USD) [665064pcs Stock]

  • 1 pcs$0.05562
  • 6,000 pcs$0.05085

Ampahany:
1N6483HE3/96
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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We specialize in Vishay Semiconductor Diodes Division 1N6483HE3/96 electronic components. 1N6483HE3/96 can be shipped within 24 hours after order. If you have any demands for 1N6483HE3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6483HE3/96 Toetran'ny vokatra

Ampahany : 1N6483HE3/96
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 800V 1A DO213AB
Series : SUPERECTIFIER®
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 800V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : -
Ankehitriny - Reverse Leakage @ Vr : 10µA @ 800V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-213AB, MELF (Glass)
Package Fitaovana mpamatsy : DO-213AB
Ny mari-pana tsy miasa - Junction : -65°C ~ 175°C

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