TPN1R603PL,L1Q Vidiny (USD) [177661pcs Stock]
- 1 pcs$0.21865
- 5,000 pcs$0.21756
- Ampahany:
- TPN1R603PL,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana, Tratrao - SCR - Modules, Diode - Zener - Arrays, Ny kristianao - SCR and Transistors - FET, MOSFET - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TPN1R603PL,L1Q electronic components. TPN1R603PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN1R603PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN1R603PL,L1Q Toetran'ny vokatra
Ampahany :
TPN1R603PL,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
Series :
U-MOSIX-H
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
3900pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
104W (Tc)
Ny mari-pana :
175°C
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-TSON Advance (3.3x3.3)
Famonosana / tranga :
8-PowerVDFN
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