Toshiba Semiconductor and Storage - TPH2010FNH,L1Q

KEY Part #: K6420066

TPH2010FNH,L1Q Vidiny (USD) [157178pcs Stock]

  • 1 pcs$0.24714
  • 5,000 pcs$0.24591

Ampahany:
TPH2010FNH,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 250V 5.6A 8SOP.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - RF, Tratrao - TRIACs, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single and Transistor - Unjunction Programmable ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TPH2010FNH,L1Q electronic components. TPH2010FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH2010FNH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH2010FNH,L1Q Toetran'ny vokatra

Ampahany : TPH2010FNH,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 250V 5.6A 8SOP
Series : U-MOSVIII-H
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 5.6A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 600pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 1.6W (Ta), 42W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : 8-SOP Advance (5x5)
Famonosana / tranga : 8-PowerVDFN

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