SIHB8N50D-GE3 Vidiny (USD) [114968pcs Stock]
- 1 pcs$0.32333
- 1,000 pcs$0.32172
- Ampahany:
- SIHB8N50D-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 500V 8.7A D2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF, Transistor - Unjunction Programmable, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, Diode - Zener - Arrays and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIHB8N50D-GE3 electronic components. SIHB8N50D-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB8N50D-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB8N50D-GE3 Toetran'ny vokatra
Ampahany :
SIHB8N50D-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 500V 8.7A D2PAK
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8.7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
850 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
527pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
156W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-263 (D²Pak)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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