[8662pcs Stock]
- Ampahany:
- SI4462DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 200V 1.15A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - JFET, Tratrao - TRIACs, Transistorio - Bipolar (BJT) - Arrays, Diodes - RF, Diodes - Zener - Iray and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4462DY-T1-GE3 electronic components. SI4462DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4462DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4462DY-T1-GE3 Toetran'ny vokatra
Ampahany :
SI4462DY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 200V 1.15A 8-SOIC
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.15A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
480 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
1.3W (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SO
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
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