SI3473DDV-T1-GE3 Vidiny (USD) [586266pcs Stock]
- 1 pcs$0.06309
- Ampahany:
- SI3473DDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CHANNEL 12V 8A 6TSOP.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - RF, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, mialoha alik and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI3473DDV-T1-GE3 electronic components. SI3473DDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3473DDV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3473DDV-T1-GE3 Toetran'ny vokatra
Ampahany :
SI3473DDV-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CHANNEL 12V 8A 6TSOP
Series :
TrenchFET® Gen III
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
17.8 mOhm @ 8.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 8V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
1975pF @ 6V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.6W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
6-TSOP
Famonosana / tranga :
SOT-23-6 Thin, TSOT-23-6
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